Tunnel diode full explanation

Tunnel diode

Tunnel diode definition

A Tunnel diode is a heavily doped p-n junction diode in which the electric current decreases as the voltage increases.

In tunnel diode, electric current is caused by “Tunneling”. The tunnel diode is used as a very fast switching device in computers. It is also used in high-frequency oscillators and amplifiers.

Symbol of tunnel diode

The circuit symbol of tunnel diode is shown in the below figure. In tunnel diode, the p-type semiconductor act as an anode and the n-type semiconductor act as a cathode. 

We know that a anode is a positively charged electrode which attracts electrons whereas cathode is a negatively charged electrode which emits electrons. In tunnel diode, n-type semiconductor emits or produces electrons so it is referred to as the cathode. On the other hand, p-type semiconductor attracts electrons emitted from the n-type semiconductor so p-type semiconductor is referred to as the anode.

What is a tunnel diode?

Tunnel diodes are one of the most significant solid-state electronic devices which have made their appearance in the last decade. Tunnel diode was invented in 1958 by Leo Esaki.

Leo Esaki observed that if a semiconductor diode is heavily doped with impurities, it will exhibit negative resistance. Negative resistance means the current across the tunnel diode decreases when the voltage increases. In 1973 Leo Esaki received the Nobel Prize in physics for discovering the electron tunneling effect used in these diodes.

A tunnel diode is also known as Esaki diode which is named after Leo Esaki for his work on the tunneling effect. The operation of tunnel diode depends on the quantum mechanics principle known as “Tunneling”. In electronics, tunneling means a direct flow of electrons across the small depletion region from n-side conduction band into the p-side valence band. 

The germanium material is commonly used to make the tunnel diodes. They are also made from other types of materials such as gallium arsenide, gallium antimonide, and silicon.

Width of the depletion region in tunnel diode

The depletion region is a region in a p-n junction diode where mobile charge carriers (free electrons and holes) are absent. Depletion region acts like a barrier that opposes the flow of electrons from the n-type semiconductor and holes from the p-type semiconductor.

The width of a depletion region depends on the number of impurities added. Impurities are the atoms introduced into the p-type and n-type semiconductor to increase electrical conductivity.

If a small number of impurities are added to the p-n junction diode (p-type and n-type semiconductor), a wide depletion region is formed. On the other hand, if large number of impurities are added to the p-n junction diode, a narrow depletion region is formed. 

In tunnel diode, the p-type and n-type semiconductor is heavily doped which means a large number of impurities are introduced into the p-type and n-type semiconductor. This heavy doping process produces an extremely narrow depletion region. The concentration of impurities in tunnel diode is 1000 times greater than the normal p-n junction diode.

In normal p-n junction diode, the depletion width is large as compared to the tunnel diode. This wide depletion layer or depletion region in normal diode opposes the flow of current. Hence, depletion layer acts as a barrier. To overcome this barrier, we need to apply sufficient voltage. When sufficient voltage is applied, electric current starts flowing through the normal p-n junction diode.

Unlike the normal p-n junction diode, the width of a depletion layer in tunnel diode is extremely narrow. So applying a small voltage is enough to produce electric current in tunnel diode.

Tunnel diodes are capable of remaining stable for a long duration of time than the ordinary p-n junction diodes. They are also capable of high-speed operations. 

Concept of tunneling

The depletion region or depletion layer in a p-n junction diode is made up of positive ions and negative ions. Because of these positive and negative ions, there exists a built-in-potential or electric field in the depletion region. This electric field in the depletion region exerts electric force in a direction opposite to that of the external electric field (voltage).

Another thing we need to remember is that the valence band and conduction band energy levels in the n-type semiconductor are slightly lower than the valence band and conduction band energy levels in the p-type semiconductor. This difference in energy levels is due to the differences in the energy levels of the dopant atoms (donor or acceptor atoms) used to form the n-type and p-type semiconductor.

Electric current in ordinary p-n junction diode

When a forward bias voltage is applied to the ordinary p-n junction diode, the width of depletion region decreases and at the same time the barrier height also decreases. However, the electrons in the n-type semiconductor cannot penetrate through the depletion layer because the built-in voltage of depletion layer opposes the flow of electrons.

If the applied voltage is greater than the built-in voltage of depletion layer, the electrons from n-side overcomes the opposing force from depletion layer and then enters into p-side. In simple words, the electrons can pass over the barrier (depletion layer) if the energy of the electrons is greater than the barrier height or barrier potential.

Therefore, an ordinary p-n junction diode produces electric current only if the applied voltage is greater than the built-in voltage of the depletion region.

Electric current in tunnel diode

In tunnel diode, the valence band and conduction band energy levels in the n-type semiconductor are lower than the valence band and conduction band energy levels in the p-type semiconductor. Unlike the ordinary p-n junction diode, the difference in energy levels is very high in tunnel diode. Because of this high difference in energy levels, the conduction band of the n-type material overlaps with the valence band of the p-type material. 

Quantum mechanics says that the electrons will directly penetrate through the depletion layer or barrier if the depletion width is very small. 

The depletion layer of tunnel diode is very small. It is in nanometers. So the electrons can directly tunnel across the small depletion region from n-side conduction band into the p-side valence band.

In ordinary diodes, current is produced when the applied voltage is greater than the built-in voltage of the depletion region. But in tunnel diodes, a small voltage which is less than the built-in voltage of depletion region is enough to produce electric current.

In tunnel diodes, the electrons need not overcome the opposing force from the depletion layer to produce electric current. The electrons can directly tunnel from the conduction band of n-region into the valence band of p-region. Thus, electric current is produced in tunnel diode.

How tunnel diode works?

Step 1: Unbiased tunnel diode

When no voltage is applied to the tunnel diode, it is said to be an unbiased tunnel diode. In tunnel diode, the conduction band of the n-type material overlaps with the valence band of the p-type material because of the heavy doping.

Because of this overlapping, the conduction band electrons at n-side and valence band holes at p-side are nearly at the same energy level. So when the temperature increases, some electrons tunnel from the conduction band of n-region to the valence band of p-region. In a similar way, holes tunnel from the valence band of p-region to the conduction band of n-region.

However, the net current flow will be zero because an equal number of charge carriers (free electrons and holes) flow in opposite directions.

Step 2: Small voltage applied to the tunnel diode

When a small voltage is applied to the tunnel diode which is less than the built-in voltage of the depletion layer, no forward current flows through the junction.

However, a small number of electrons in the conduction band of the n-region will tunnel to the empty states of the valence band in p-region. This will create a small forward bias tunnel current. Thus, tunnel current starts flowing with a small application of voltage.

Step 3: Applied voltage is slightly increased

When the voltage applied to the tunnel diode is slightly increased, a large number of free electrons at n-side and holes at p-side are generated. Because of the increase in voltage, the overlapping of the conduction band and valence band is increased.

In simple words, the energy level of an n-side conduction band becomes exactly equal to the energy level of a p-side valence band. As a result, maximum tunnel current flows.

Step 4: Applied voltage is further increased

If the applied voltage is further increased, a slight misalign of the conduction band and valence band takes place. 

Since the conduction band of the n-type material and the valence band of the p-type material sill overlap. The electrons tunnel from the conduction band of n-region to the valence band of p-region and cause a small current flow. Thus, the tunneling current starts decreasing.

Step 5: Applied voltage is largely increased

If the applied voltage is largely increased, the tunneling current drops to zero. At this point, the conduction band and valence band no longer overlap and the tunnel diode operates in the same manner as a normal p-n junction diode.

If this applied voltage is greater than the built-in potential of the depletion layer, the regular forward current starts flowing through the tunnel diode.

The portion of the curve in which current decreases as the voltage increases is the negative resistance region of the tunnel diode. The negative resistance region is the most important and most widely used characteristic of the tunnel diode.

A tunnel diode operating in the negative resistance region can be used as an amplifier or an oscillator.

Advantages of tunnel diodes

• Long life
• High-speed operation
• Low noise
• Low power consumption

Disadvantages of tunnel diodes

• Tunnel diodes cannot be fabricated in large numbers
• Being a two terminal device, the input and output are not isolated from one another.

Applications of tunnel diodes

• Tunnel diodes are used as logic memory storage devices.
• Tunnel diodes are used in relaxation oscillator circuits.
• Tunnel diode is used as an ultra high-speed switch.
• Tunnel diodes are used in FM receivers

Schottky diode full explanation

Schottky diode definition

Schottky diode is a metal-semiconductor junction diode that has less forward voltage drop than the P-N junction diode and can be used in high-speed switching applications. 

What is a schottky diode?

In a normal p-n junction diode, a p-type semiconductorand an n-type semiconductor are used to form the p-n junction. When a p-type semiconductor is joined with an n-type semiconductor, a junction is formed between the P-type and N-type semiconductor. This junction is known as P-N junction. 

In schottky diode, metals such as aluminum or platinum replace the P-type semiconductor. The schottky diode is named after German physicist Walter H. Schottky.

Schottky diode is also known as schottky barrier diode, surface barrier diode, majority carrier device, hot-electron diode, or hot carrier diode. Schottky diodes are widely used in radio frequency (RF) applications.

When aluminum or platinum metal is joined with N-type semiconductor, a junction is formed between the metal and N-type semiconductor. This junction is known as a metal-semiconductor junction or M-S junction. A metal-semiconductor junction formed between a metal and n-type semiconductor creates a barrier or depletion layer known as a schottky barrier.

Schottky diode can switch on and off much faster than the p-n junction diode. Also, the schottky diode produces less unwanted noise than p-n junction diode. These two characteristics of the schottky diode make it very useful in high-speed switching power circuits. 

When sufficient voltage is applied to the schottky diode, current starts flowing in the forward direction. Because of this current flow, a small voltage loss occurs across the terminals of the schottky diode. This voltage loss is known as voltage drop.

A silicon diode has a voltage drop of 0.6 to 0.7 volts, while a schottky diode has a voltage drop of 0.2 to 0.3 volts. Voltage loss or voltage drop is the amount of voltage wasted to turn on a diode.

In silicon diode, 0.6 to 0.7 volts is wasted to turn on the diode, whereas in schottky diode, 0.2 to 0.3 volts is wasted to turn on the diode. Therefore, the schottky diode consumes less voltage to turn on.

The voltage needed to turn on the schottky diode is same as that of a germanium diode. But germanium diodes are rarely used because the switching speed of germanium diodes is very low as compared to the schottky diodes.

Symbol of schottky diode

The symbol of schottky diode is shown in the below figure. In schottky diode, the metal acts as the anode and n-type semiconductor acts as the cathode.

Metal-semiconductor (M-S) junction

Metal-semiconductor (M-S) junction is a type of junction formed between a metal and an n-type semiconductor when the metal is joined with the n-type semiconductor. Metal-semiconductor junction is also sometimes referred to as M-S junction. 

The metal-semiconductor junction can be either non-rectifying or rectifying. The non-rectifying metal-semiconductor junction is called ohmic contact. The rectifying metal-semiconductor junction is called non-ohmic contact.

What is a schottky barrier?

Schottky barrier is a depletion layer formed at the junction of a metal and n-type semiconductor. In simple words, schottky barrier is the potential energybarrier formed at the metal-semiconductor junction.The electrons have to overcome this potential energy barrier to flow across the diode.

The rectifying metal-semiconductor junction forms a rectifying schottky barrier. This rectifying schottky barrier is used for making a device known as schottky diode. The non-rectifying metal-semiconductor junction forms a non-rectifying schottky barrier.

One of the most important characteristics of a schottky barrier is the schottky barrier height. The value of this barrier height depends on the combination of semiconductor and metal.

The schottky barrier height of ohmic contact (non-rectifying barrier) is very low whereas the schottky barrier height of non-ohmic contact (rectifying barrier) is high.

In non-rectifying schottky barrier, the barrier height is not high enough to form a depletion region. So depletion region is negligible or absent in the ohmic contact diode.

On the other hand, in rectifying schottky barrier, the barrier height is high enough to form a depletion region. So the depletion region is present in the non-ohmic contact diode.

The non-rectifying metal-semiconductor junction (ohmic contact) offers very low resistance to the electric current whereas the rectifying metal-semiconductor junction offers high resistance to the electric current as compared to the ohmic contact.

The rectifying schottky barrier is formed when a metal is in contact with the lightly doped semiconductor, whereas the non-rectifying barrier is formed when a metal is in contact with the heavily doped semiconductor.

The ohmic contact has a linear current-voltage (I-V) curve whereas the non-ohmic contact has a non-linear current-voltage (I-V) curve.

Energy band diagram of schottky diode

The energy band diagram of the N-type semiconductor and metal is shown in the below figure.

The vacuum level is defined as the energy level of electrons that are outside the material. The work function is defined as the energy required to move an electron from Fermi level (E_F) to vacuum level (E₀).

The work function is different for metal and semiconductor. The work function of a metal is greater than the work function of a semiconductor. Therefore, the electrons in the n-type semiconductor have high potential energy than the electrons in the metal.

The energy levels of the metal and semiconductor are different. The Fermi level at N-type semiconductor side lies above the metal side.  

We know that electrons in the higher energy level have more potential energy than the electrons in the lower energy level. So the electrons in the N-type semiconductor have more potential energy than the electrons in the metal.

The energy band diagram of the metal and n-type semiconductor after contact is shown in the below figure.

When the metal is joined with the n-type semiconductor, a device is created known as schottky diode. The built-in-voltage (V_bi) for schottky diode is given by the difference between the work functions of a metal and n-type semiconductor.

How schottky diode works?

Unbiased schottky diode

When the metal is joined with the n-type semiconductor, the conduction band electrons (free electrons) in the n-type semiconductor will move from n-type semiconductor to metal to establish an equilibrium state.

We know that when a neutral atom loses an electron it becomes a positive ion similarly when a neutral atom gains an extra electron it becomes a negative ion.

The conduction band electrons or free electrons that are crossing the junction will provide extra electrons to the atoms in the metal. As a result, the atoms at the metal junction gains extra electrons and the atoms at the n-side junction lose electrons.

The atoms that lose electrons at the n-side junction will become positive ions whereas the atoms that gain extra electrons at the metal junction will become negative ions. Thus, positive ions are created the n-side junction and negative ions are created at the metal junction. These positive and negative ions are nothing but the depletion region.

Since the metal has a sea of free electrons, the width over which these electrons move into the metal is negligibly thin as compared to the width inside the n-type semiconductor. So the built-in-potential or built-in-voltage is primarily present inside the n-type semiconductor. The built-in-voltage is the barrier seen by the conduction band electrons of the n-type semiconductor when trying to move into the metal.

To overcome this barrier, the free electrons need energy greater than the built-in-voltage. In unbiased schottky diode, only a small number of electrons will flow from n-type semiconductor to metal. The built-in-voltage prevents further electron flow from the semiconductor conduction band into the metal.

The transfer of free electrons from the n-type semiconductor into metal results in energy band bending near the contact.

Forward biased schottky diode

If the positive terminal of the battery is connected to the metal and the negative terminal of the battery is connected to the n-type semiconductor, the schottky diode is said to be forward biased.

When a forward bias voltage is applied to the schottky diode, a large number of free electrons are generated in the n-type semiconductor and metal. However, the free electrons in n-type semiconductor and metal cannot cross the junction unless the applied voltage is greater than 0.2 volts. 

If the applied voltage is greater than 0.2 volts, the free electrons gain enough energy and overcomes the built-in-voltage of the depletion region. As a result, electric current starts flowing through the schottky diode.

If the applied voltage is continuously increased, the depletion region becomes very thin and finally disappears.

Reverse bias schottky diode

If the negative terminal of the battery is connected to the metal and the positive terminal of the battery is connected to the n-type semiconductor, the schottky diode is said to be reverse biased.

When a reverse bias voltage is applied to the schottky diode, the depletion width increases. As a result, the electric current stops flowing. However, a small leakage current flows due to the thermally excited electrons in the metal.

If the reverse bias voltage is continuously increased, the electric current gradually increases due to the weak barrier.

If the reverse bias voltage is largely increased, a sudden rise in electric current takes place. This sudden rise in electric current causes depletion region to break down which may permanently damage the device.

V-I characteristics of schottky diode

The V-I (Voltage-Current) characteristics of schottky diode is shown in the below figure. The vertical line in the below figure represents the current flow in the schottky diode and the horizontal line represents the voltage applied across the schottky diode.

The V-I characteristics of schottky diode is almost similar to the P-N junction diode. However, the forward voltage drop of schottky diode is very low as compared to the P-N junction diode.

The forward voltage drop of schottky diode is 0.2 to 0.3 volts whereas the forward voltage drop of silicon P-N junction diode is 0.6 to 0.7 volts.

If the forward bias voltage is greater than 0.2 or 0.3 volts, electric current starts flowing through the schottky diode. 

In schottky diode, the reverse saturation current occurs at a very low voltage as compared to the silicon diode.

Difference between schottky diode and P-N junction diode

The main difference between schottky diode and p-n junction diode is as follows:

In schottky diode, the free electrons carry most of the electric current. Holes carry negligible electric current. So schottky diode is a unipolar device. In P-N junction diode, both free electrons and holes carry electric current. So P-N junction diode is a bipolar device.

The reverse breakdown voltage of a schottky diode is very small as compared to the p-n junction diode.

In schottky diode, the depletion region is absent or negligible, whereas in p-n junction diode the depletion region is present.

The turn-on voltage for a schottky diode is very low as compared to the p-n junction diode.

In schottky diode, electrons are the majority carriers in both metal and semiconductor. In P-N junction diode, electrons are the majority carriers in n-region and holes are the majority carriers in p-region.

Advantages of schottky diode

• Low junction capacitance

We know that capacitance is the ability to store an electric charge. In a P-N junction diode, the depletion region consists of stored charges. So there exists a capacitance. This capacitance is present at the junction of the diode. So it is known as junction capacitance.

In schottky diode, stored charges or depletion region is negligible. So a schottky diode has a very low capacitance.

• Fast reverse recovery time

The amount of time it takes for a diode to switch from ON state to OFF state is called reverse recovery time.

In order to switch from ON (conducting) state to OFF (non-conducting) state, the stored charges in the depletion region must be first discharged or removed before the diode switch to OFF (non-conducting) state.

The P-N junction diode do not immediately switch from ON state to OFF state because it takes some time to discharge or remove stored charges at the depletion region. However, in schottky diode, the depletion region is negligible. So the schottky diode will immediately switch from ON to OFF state.

• High current density

We know that the depletion region is negligible in schottky diode. So applying is small voltage is enough to produce large current.

• Low forward voltage drop or low turn on voltage

The turn on voltage for schottky diode is very small as compared to the P-N junction diode. The turn on voltage for schottky diode is 0.2 to 0.3 volts whereas for P-N junction diode is 0.6 to 0.7 volts. So applying a small voltage is enough to produce electric current in the schottky diode.

• High efficiency
• Schottky diodes operate at high frequencies.
• Schottky diode produces less unwanted noise than P-N junction diode.

Disadvantages of schottky diode

• Large reverse saturation current

Schottky diode produces large reverse saturation current than the p-n junction diode. 

Applications of schottky diodes

• Schottky diodes are used as general-purpose rectifiers.
• Schottky diodes are used in radio frequency (RF) applications.
• Schottky diodes are widely used in power supplies.
• Schottky diodes are used to detect signals.
• Schottky diodes are used in logic circuits.

Daily news 2 April 2018

National News

1. India Becomes 2nd Largest Producer of Mobile Phones in the World
i. India is now the second-largest mobile phone producer in the world after China. According to the data shared by Indian Cellular Association with the government, annual production of mobile phones in India increased from 3 million units in 2014 to 11 million units in 2017.
ii. With this, India replaced Vietnam to become the second largest producer of mobile phones in 2017. 

Static/Current Takeaways Important for NABARD Grade-A Exam 2018-

Vietnam Capital- Hanoi, Currency- Vietnamese dong, President- Tran Dai Quang.



2. Delhi Becomes 1st City to Roll-Out Euro VI Fuel
i. With an aim to combat the rising levels of air pollution in Delhi-NCR region, petrol pumps in the capital started supplying ultra-clean Bharat Stage VI grade fuel (both petrol and diesel).
ii. This move makes New Delhi the first city in the country to switch from BS-IV grade fuels to BS-VI (equivalent to fuel meeting Euro-VI emission norms).

Static/Current Takeaways Important for NABARD Grade-A Exam 2018-

The major difference in standards between the existing BS-IV and the new BS-VI auto fuel norms is the presence of sulphur.

3. Kerala to Host Asia's Largest Startup Conclave
i. Asia's largest startup ecosystem congregation, Huddle Kerala, will be held at Kovalam. The initiative is envisaged to provide a platform for start-ups to pitch their products and interact with a wide array of technology and industry leaders from around the world.
ii. Chief Minister Pinarayi Vijayan will inaugurate the conclave, being organised by the Kerala Startup Mission (KSUM) in association with Internet and Mobile Association of India (IAMAI) and IAMAI Startup Foundation.

Static/Current Takeaways Important for NABARD Grade-A Exam 2018-

Palaniswamy Sathasivam is the present Governor of Kerala.

Thiruvananthapuram is the capital city of Kerala.



4. Foundation Stone Of Naitwar Mori Hydro Electric Project Laid In Uttarakhand
i. R K Singh, Minister of State (IC) for Power and New & Renewable Energy, laid the foundation stone of the 60 MW Naitwar Mori Hydro Electric Project (NMHEP) along with Uttarakhand Chief Minister Shri Trivendra Singh Rawat in Uttarkashi.
ii. The Proposed NMHEP is located on the river Tons – a tributary of the Yamuna, in Uttarkashi district of Uttarakhand. This run-of-the-river project was allocated to SJVN Ltd by the Government of Uttarakhand.

5. U.P. CM Inaugurates India’s Longest Elevated Road in Ghaziabad
i. Uttar Pradesh Chief Minister Yogi Adityanath inaugurated a 10.30-km-long elevated road, touted to be the longest of its kind in the country, connecting UP Gate and Rajnagar Extension, Ghaziabad.
ii. Built at a cost of Rs1,147 crore, the six-lane elevated road is supported on 227 pillars. The road will make it easier to commute between Delhi and Ghaziabad.

6. Mangaluru Airport Adjudged India's Cleanest Airport
i. The Mangalore International Airport has been adjudged the cleanest airport in the country. Airport director VV Rao received the award during the 23rd annual day celebrations of the Airports Authority of India (AAI) in New Delhi.
ii. In the survey conducted across 53 airports in the country by AAI, Mangaluru airport was adjudged the cleanest.

Static/Current Takeaways Important for NABARD Grade-A Exam 2018-

The Chairman of Airports Authority of India is Guruprasad Mohapatra.

International News

7. World Autism Awareness Day- 2 April
i. The United Nations General Assembly unanimously declared 2 April as World Autism Awareness Day to highlight the need to help improve the quality of life of those with autism so they can lead full and meaningful lives as an integral part of society.
ii. The theme for WAAD 2018 is "Empowering Women and Girls with Autism".

8. USA and South Korea Begin Joint Military Exercise- 'Foal Eagle'
i. The United States and South Korea began their joint military training exercise named 'Foal Eagle. More than 11,500 U.S. troops and nearly 300,000 South Korean forces will take part in the four-week exercises.
ii. Foal Eagle, the largest annual joint military exercise in South Korea, usually runs about two months. Its start was delayed this year at the request of South Korea until after the Winter Olympics.

Static/Current Takeaways Important for NABARD Grade-A Exam 2018-

South Korea President- Moon Jae-in, Capital- Seoul.




Banking News

9. SIDBI Foundation Day- Launches 'Samridhi- virtual assistant' & ' Bankability Kit'
i. SIDBI (Small Industries Development Bank of India) has celebrated its foundation day. Chairman Managing Director of SIDBI Mohammad Mustafa launched a series of initiatives from its Lucknow bank headquarters.
ii. An MoU was signed with The New India Assurance Co. Ltd. and two MSMEs were issued insurance policies. Chairman SIDBI also launched 'Samridhhi- the virtual assistant' on banks revamped universal loan portal www.udyamimitra.in. During the day, a ‘Bankability Kit’ (brought in partnership with Bank of Baroda and IDBI Bank) was also launched.

Static/Current Takeaways Important for NABARD Grade-A Exam 2018-

SIDBI CEO- Dr Kshatrapati Shivaji, Founded- 2 April 1990, Headquarter- Lucknow.



10. Jana Small Finance Bank Commences Operations
i. Jana Small Finance Bank (formerly Janalakshmi Financial Services) announced commencement of its banking operations.
ii. To cover its extensive customer base, Jana Bank will initially open 19 branches across 18 States and expand to 200 banking outlets,  including the 25% unbanked rural branches by June 2018.

Static/Current Takeaways Important for NABARD Grade-A Exam 2018-

Ramesh Ramanathan is the chairman of Jana Group.





Ajay Kanwal is the Managing Director and Chief Executive Officer of Jana Small Finance Bank.





Jana Small Finance Bank headquarters in Bengaluru, Karnataka.



11. SEBI Doubles Investment Limit of Angel Funds to Rs10 crore
i. Looking to provide an impetus to early-stage start-ups, markets regulator Securities and Exchange Board of India (SEBI) decided to double the investment limit by angel funds in venture capital undertakings to Rs10 crore from the current Rs5 crore.
ii. The SEBI board has approved amendments to Alternative Investment Funds (AIF) regulations with respect to ‘Angel Funds.’ Further, SEBI would halve the minimum corpus size required for an angel fund to register with it to Rs5 crore.

Static/Current Takeaways Important for Exam-

SEBI- Securities and Exchange Board of India.





SEBI Chairman- Ajay Tyagi, Headquarters- Mumbai.



12. RBI Changes Methodology for Bond Valuation to Check Manipulation
i. In a bid to prevent the possibility of manipulation in the prices of securities, especially government securities (G-Secs), the Reserve Bank of India has changed the methodology used by debt market players, including banks and primary dealers, for their valuation.
ii. As per a central bank directive, security/bond valuation will be based on the weighted average price of the last half-an-hour of trading on the last trading day of every quarter against the last traded price earlier.

Static/Current Takeaways Important for NABARD Grade-A Exam 2018-

Dr Urjit Patel is the 24th Governor of RBI.





RBI Headquarters in Mumbai.





RBI was Established on 1st April 1935.

Awards

13. J.C. Daniel Award for Sreekumaran Thampi
i. Lyricist and director Sreekumaran Thampi has been selected for the J.C. Daniel Award, the Kerala government’s highest honour for lifetime contribution to Malayalam cinema. The award comprises of Rs5 lakh and a citation.
ii. The award was distributed at the Kerala State Film Award distribution function in Kollam. Thampi made his debut in 1966 with Kattumallika.

Static/Current Takeaways Important for NABARD Grade-A Exam 2018-

Kerala CM- Pinarayi Vijayan, Governor- Justice (Retd.) Palaniswamy Sathasivam.

Appointments 

14. Debjani Ghosh Appointed New President of Nasscom
i. Debjani Ghosh, former managing director of Intel South Asia, is the new president of Nasscom. She has replaced R.Chandrashekhar upon completion of his term.
ii. A big propagator of gender diversity and equal representation in corporate India, Ms Ghosh was the first woman to lead Intel India and MAIT (Manufacturers' Association for Information Technology).

Static/Current Takeaways Important for NABARD Grade-A Exam 2018-

National Association of Software and Services Companies is the full form of Nasscom.

Raman Roy is the chairman of Nasscom.

15. US Diplomat DiCarlo Becomes 1st Female UN Political Chief
i. Long-serving American diplomat Rosemary DiCarlo was appointed to become the first woman to head UN political affairs, one of the most high-profile positions at the world body. DiCarlo has replaced Jeffrey Feltman.
ii. DiCarlo also served as deputy assistant secretary of state for European and Eurasian affairs and director for United Nations affairs at the national security council in Washington.

Static/Current Takeaways Important for NABARD Grade-A Exam 2018-

The United Nations is an international organization founded in 24th of October 1945. 





It is currently made up of 193 Member States.





The Headquarters of UN: New York, USA.





Antonio Guterres is the Secretary-General of the United Nations.

16. Lt Gen Harpal Singh Takes Charge as Director General Border Roads 
i. Lt Gen Harpal Singh an alumnus of National Defence Academy, Khadakwasla has been appointed as Director General Border Roads (DGBR).
ii.  He commanded a Border Roads Task Force in Jammu & Kashmir valley.

17. Shuttler Kidambi Srikanth Appointed as Deputy Collector in Andhra Pradesh
i. Indian shuttler Kidambi Srikanth was appointed as a Deputy Collector in the state government by the CM of Andhra Pradesh N Chandrababu Naidu.
ii. K Srikanth was recently being awarded the Padma Shri award, India's fourth highest civilian honour. The Cabinet also announced a reward of Rs 2 crore for the shuttler.

Static/Current Takeaways Important for NABARD Grade-A Exam 2018-

Kidambi Srikanth became the first Indian to win four Superseries titles in a calendar year after winning the French Open earlier in 2017.

18. Chandra Bhushan Appointed Deputy Election Commissioner
i. Senior bureaucrat Chandra Bhushan Kumar has been appointed as Deputy Election Commissioner as part of a major bureaucratic reshuffle effected by the government.
ii. A total of 13 officers have been appointed as joint secretaries in different central government departments. Bhushan has been appointed to the post for five years.

Static/Current Takeaways Important for NABARD Grade-A Exam 2018-

Om Prakash Rawat is the present Chief Election Commissioner of India.

Sports News

19. Miami Open 2018- Complete List of Winners
i. The Miami Open, sometimes known as the Miami Masters, is an annual tennis tournament for men and women currently held in Florida, the USA.
ii. American John Isner won his first ever Masters 1,000 title with a victory over German Alexander Zverev in the Miami Open final. S. Stephens won in the Women's singles category.

Find the Complete List of Winners Here

20. Kerala Lifts Their 6th Santosh Trophy
i. Kerala has lifted their sixth Santosh Trophy Football title. In a thrilling final at the Salt Lake Stadium in Kolkata.
ii. Kerala held their nerves to beat defending champions and 32-time winners Bengal via penalty shootout. Locked 2-2 after extra time, Kerala goalkeeper V Mithun put up a stellar show in the tie-breaker to help his side win 4-2.

Obituaries

21. Former Manipur CM R K Dorendra Singh Passes Away
i. Former Manipur Chief Minister R K Dorendra Singh passed away in Imphal.
ii. He was 83. Dorendra Singh had been chief minister of the state four times between 1974 to 1993. Before becoming the chief minister, he was the Speaker of Manipur Assembly.

Static/Current Takeaways Important for NABARD Grade-A Exam 2018-

Manipur CM- Nongthombam Biren Singh, Governor- Dr. Najma A. Heptulla.